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7nm CMOS FinFET technology featuring EUV lithography, 4th gen. dual Fin and 2nd gen. multi-eWF gate stack is presented, providing 20% faster speed or consuming 35% less total power over 10nm technology [1]. EUV lithography, fully applied to MOL contacts and minimum-pitched metal/via interconnects, can reduce >25% mask steps with higher fidelity and smaller CD variation. AVT of 6T HD SRAM cell are...
Semiconductor technology for memory and logic devices has been developed to handle large amounts of data with a high operational speed. Attaining the functional abilities of the human brain is a primary goal for advanced modern electronics. Aside from neural networks with neurons and synapses as building blocks utilizing parallel processes to treat massive data, biological memory performs learning...
Recently, we have reported the approach of transmitting photo-sensor charge signal to preamplifier using long cable for development of hybrid PET-MRI. However, pulse distortions degrading the performance of PET detector might occur in this approach. The purpose of this study is to develop a pulse restoration circuit (PRC) compensating the performance degradations caused by using the long cable from...
Graphene is a two-dimensional monolayer comprised of carbon atoms. By its unique intrinsic properties, graphene has many advantages for gas sensing. In this paper, we find results of the gas sensing performance using uniform single crystal structure graphene by mechanical exfoliation method measured under room temperature, atmospheric pressure. Also, we discuss the effects of various thermal treatments...
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