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Electrical and radiation test results will be presented on a deep submicron radiation hardened 16 Mb SRAM IC. The significant technology development and device design challenges will be chronicled from initial SEE modeling, to testchip hardware, to final electrical characterization and radiation test validation. Model to hardware correlation results and model validation will be described. These results...
Technology scaling in modern day microelectronics has introduced characteristics and limitations that impacted radiation testing and modeling to the point that rendered traditional methods and practices obsolete in many cases. There is a need to rethink test methodologies, procedures and models in order to predict the true behavior of these technologies in space. In this paper we hope to highlight...
The IBM 256 K SRAM is a high-performance, low-power device designed and fabricated in 0.8- mu m Enhanced Radiation-Hardened CMOS technology (RHCMOS-E). It is organized in a 32 K*8 or 256 K*1 configuration and is available with either CMOS or TTL input receivers. The device was developed to satisfy future space application requirements. Radiation testing indicates that the device meets or exceeds all...
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