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In this paper, we present first demonstration of InGaAs-on-insulator (-OI) MOSFETs with wafer size scalability up to Si wafer size of 300 mm and larger by direct wafer bonding (DWB) process using InGaAs channels grown on 4-inch Si donor substrates with III–V buffer layers instead of InP donor substrates. It is found that this DWB process can provide the high quality InGaAs thin films on Si. The fabricated...
Instability of InGaAs channel nMOSFETs with the gate stack under positive bias stress demonstrates recoverable and unrecoverable components, which can be tentatively assigned to the pre-existing and generated defects, respectively. The recoverable component is determined to be primarily associated with the defects in the interfacial...
We demonstrate room temperature continuous wave lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars. Single-cell high-Q photonic crystal cavities are formed with nanopillars by selective-area epitaxy. Control of the nanopillar geometry and heterostructures allows for high-Q and large confinement factor, resulting in a low threshold power density of 75 W/cm2 at 1040...
We report the demonstration of photonic crystal lasers formed bottom-up by patterned III-V nanopillar (NP) arrays. In this work, we present a method whereby the photonic band gap region and active gain regions are formed simultaneously by selective-area metal-organic chemical vapor deposition. This approach allows us the ability to design device parameters lithographically. By accurate control of...
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