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A high temperature silicon on insulator pressure sensor utilising a Ti/TiN/Pt/Au electrode is presented for improving the thermal stability of ohmic contacts, which can work stably at high temperatures of up to 500°C. To analyse the characteristics of the electrode at high temperatures, a special test structure is measured using the linear transmission line method and Auger electron spectroscopy....
In this paper, we present recent research on silicon nanowires for ultra-fast and ultra-broadband optical signal processing at DTU Fotonik. The advantages and limitations of using silicon nanowires for optical signal processing are revealed through experimental demonstrations of various optical signal processing.
This paper reports a silicon-silicon anodic bonding process based on embedded glass. We successfully embedded glass into patterned silicon groove by fusion treatment and bonded it with another silicon wafer by anodic bonding process. This process realizes the precise control of bonding pattern and the depth of the bonding gap without electrical connection between two silicon wafers. Tension test result...
This paper presents an overview of recent work on the use of silicon waveguides for processing optical data signals. We will describe ultra-fast, ultra-broadband, polarisation-insensitive and phase-sensitive applications including processing of spectrally-efficient data formats and optical phase regeneration.
We have successfully demonstrated 160 Gbit/s all-optical packet switching based on cross-phase modulation using a silicon chip. Error free performance is achieved for the 4-to-1 switched 160 Gbit/s packet.
We experimentally demonstrate self-phase modulation based all-optical regeneration of a 40 Gbit/s serial data signal in a silicon nanowire. Bit error rate characterization shows 2 dB receiver power improvement.
Atmospheric-pressure plasma jet (APPJ) has attracted tremendous attention in the past decade mainly due to its low cost and flexibility without the use of expensive vacuum equipment. It has found numerous applications such as surface cleaning, surface modification, thin-film deposition and recently biomedical applications that may include sterilization, blood coagulation, cell growth enhancement and...
We have demonstrated 160 Gb/s all-optical data modulation with an extinction ratio of 18.5 dB based on XPM in a silicon nanowire. Error free performance is achieved for the optically modulated 160 Gb/s signal.
Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 μm.
We describe recent demonstrations of exploiting highly nonlinear silicon waveguides for ultrafast optical signal processing. We describe wavelength conversion and serial-to-parallel conversion of 640 Gbit/s data signals and 1.28 Tbit/s demultiplexing and all-optical sampling.
We experimentally demonstrate broadband polarization-insensitive one-to-two wavelength conversion of a 10-Gb/s DPSK data signal based on non-degenerate four-wave mixing in a silicon nanowire with bit-error rate measurements.
We present an experimental set-up for measuring spectral and temporal nonlinear responses of silicon nanowires. We find that switching windows are independent of device lengths and there is no memory effect of the FWM response.
All-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits.
We describe recent demonstrations of exploiting highly nonlinear silicon nanowires for processing Tbit/s optical data signals. We perform demultiplexing and optical waveform sampling of 1.28 Tbit/s and wavelength conversion of 640 Gbit/s data signals.
The lithiation mechanism of Mg2Si electrode has been investigated using the first-principles calculations within the density functional theory. The detailed reaction paths of lithium insertion into Mg2Si were analyzed, and the calculated results indicate that Li1Mg2Si is just the critical phase, which the substitution of Li and extrusion of Mg begin to happen. The relative volume changes for the electrode...
We report on all-optical wavelength conversion of 160, 320 and 640 Gbit/s line-rate data signals using four-wave mixing in a 3.6 mm long silicon waveguide. Bit error rate measurements validate the performance within FEC limits.
All-optical wavelength conversion for a 320 Gb/s RZ-DPSK signal is demonstrated based on four wave mixing in a silicon nanowire. BER better than 10-9 is achieved for the wavelength converted RZ-DPSK signal.
We present a tunable wavelength conversion of sub-picosecond pulses based on four-wave mixing in a dispersion engineered silicon nanowire. A 100-nm tuning range of the converted wavelength is demonstrated with an almost constant conversion efficiency.
We present WDM multicasting based on non-degenerate four-wave mixing in a silicon nanowire. A one-to-six phase-preserving wavelength multicasting of 10 Gb/s differential phase-shift-keying data is experimentally demonstrated with bit-error rate measurements.
We propose using a hydrogenated amorphous silicon waveguide for ultra-high-speed serial data waveform sampling. 320 Gbit/s serial optical data sampling is experimentally demonstrated with +12 dB intrinsic four wave mixing conversion efficiency.
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