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This paper introduces a kind of robot which can complete the vascular intervention under doctor's remote control. A manipulator is designed to transmit and rotate the guide wire like a doctor's hand. The robot comprises four manipulators, and it can complete some classical intervention operations what a doctors and an assistant can do during the ordinary vascular intervention. Then the system control...
This paper presents a directional protection scheme for transmission lines based on directional comparison of the non-period current, which is estimated by a second-order differential algorithm. When the directions of non-periodic current at both sides are the same, the fault is discriminated as internal fault. When the directions are opposite, the fault is discriminated as external fault. A variety...
This paper presents a capacitor discharge sintering process with a homemade silver-nickel paste for thermoelectric element interconnections. The paste is a 75 nm silver/nickel composite mixture. Without using any specific atmosphere control, the capacitor discharge is capable of nanoparticle sintering with time-efficient process at room temperature. A 0.01 F capacitor is serially connected to the...
Locating high-resistance grounding faults poses a tough and challenging problem for the safety of DC railway systems. High-resistance grounding fault current isn't sufficient to trigger switches, which may expand the accident or turn into potential hazards. In order to overcome the limits of the existing methods (such as signal injecting method, resistance method and so), developing a novel fault...
In this paper we investigate the reliability of Cu contacts with both Ta and W based barriers using thermal and electrical stressing. The Ta based barrier showed superior resistance to electrical stressing, with a time-to-failure approaching that of the W-plug reference and a via like failure mode. However early fails reduce the t50 due to high process induced stress imposed by the pre-metal dielectric...
The design and characterization of a high performance 0.5 μm channel CMOS is described. The design features thin epi with retrograded n-well, an n+ polysilicon gate electrode, 12.5 nm gate oxide, shallow source/drain diffusions, and thin self-aligned titanium silicides. To control channel hot electron degradation effects in the NFET device with 3.3V power supply, different S/D junctions with graded...
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