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In this paper, an optimized structure of 4H-SiC U-shaped trench gate MOSFET (UMOSFET) with low resistance is proposed. The optimized structure adds an n-type region, wrapping the p+ shielding region incorporated at the bottom of the trench gate. The depletion region formed by the p+ shielding region reduces greatly for the high dopant concentration of the added region. This added region also conducts...
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