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This paper reports ultralow contact resistivities ($\rho _{c})$ achieved on highly doped p-SiGe with two low-temperature contact formation methods. One method combines precontact amorphization implantation with ~500 °C rapid thermal processing (RTP)-based Ti germano-silicidation; $\rho _{c}$ achieved was $\sim 2.9\times 10^{-9}~\Omega \cdot $ cm2. The other method combines codeposited TiSi—Ti:Si...
Thermal integrity is one of the most important challenges faced by three-dimensional integrated circuits (3D ICs). Towards this, thermal through-silicon-vias (TTSVs) have been widely used to assist heat dissipation. The metal inside TTSVs can conduct heat more effectively than the silicon substrate, and the metal bumps underneath TTSVs can help heat penetrate through the inter-layer thermal interface...
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