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This paper presents 2-D numerical simulation results of single-event burnout (SEB) in power planar vertical double-diffused MOSFET (VDMOSFET) with localized carrier lifetime control. A low carrier lifetime control region (LCLCR) is introduced to accelerate the recombination rate of the generated holes caused by an ion’s impact. The optimal localized range with LCLCR in epitaxial layer has been investigated...
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