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In this paper, we propose a novel image interpolation algorithm, which is formulated via combining both the local autoregressive (AR) model and the nonlocal adaptive 3-D sparse model as regularized constraints under the regularization framework. Estimating the high-resolution image by the local AR regularization is different from these conventional AR models, which weighted calculates the interpolation...
The VDMOS physical modeling method is studied, and then a VDMOS physical model is proposed for IC CAD. In this model, for the region whose cross-section area of electron flow is variable, a differential equation for the vertical electric field, which considers the high electric field's strong influence on the electron mobility, is established. Moreover, when the nonuniform electron concentration distribution...
This paper presents a charge-based compact model for the arbitrary doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. Starting from Poissonpsilas equation with fixed charge and inversion charge terms, an accurate equation of inversion charge is obtained with the full-depletion approximation. Substituting this inversion charge expression into Pao-Sahpsilas dual integral, a drain current...
A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and...
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