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Wide bandgap semiconductors, particularly In2O3:Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high‐concentration oxygen vacancy (VO) defects, the mobility of ITO is always lower than 40 cm2 V−1 s−1. Recently, hydrogen‐doped In2O3 (In2O3:H) films have been proven to have high mobility (>100 cm...
Short‐wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short‐wave infrared cameras such as InGaAs have the disadvantage of complex heterogeneous integration with complementary metal–oxide–semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, a low‐cost,...
Solution‐processed PbS colloidal quantum dots (CQDs) are promising optoelectronic materials for next‐generation infrared imagers due to their monolithic integratability with silicon readout circuit and tunable bandgap controlled by CQDs size. However, large‐size PbS CQDs (diameter >4 nm) for longer shortwave‐infrared photodetection consist mainly of {100} facets with incomplete surface passivation...
Infrared solar cells are regarded as candidates for expanding the solar spectrum of c‐Si cells, and the window electrodes are usually transparent conductive oxide (TCO) such as widely used indium tin oxide material. However, due to the low transmittance of the TCO in the near‐infrared region, most near‐infrared light cannot penetrate the electrode and be absorbed by the active layer. Here, the propose...
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