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Atomically thin, 2D, and semiconducting transition metal dichalcogenides (TMDs) are seen as potential candidates for complementary metal oxide semiconductor (CMOS) technology in future nodes. While high‐performance field effect transistors (FETs), logic gates, and integrated circuits (ICs) made from n‐type TMDs such as MoS2 and WS2 grown at wafer scale have been demonstrated, realizing CMOS electronics...
Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to developing next‐generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, scalable growth and vanadium (V) doping of 2D WSe2 at front‐end‐of‐line and back‐end‐of‐line compatible temperatures of 800 and 400 °C, respectively, is reported. A combination of experimental...
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