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III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on near‐infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show...
Piezotronics and piezo-phototronics have received increasing attention in flexible energy-harvesting devices, self-powered sensor systems utilizing piezoelectric semiconductor materials, such as ZnO, GaN and monolayer MoS2. Piezoelectric potentials induced by the externally applied strain can effectively control the generation, recombination and transport of the charge carriers for achieving high-performance...
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