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Electromigration (EM) greatly affects the long-term reliability of VLSI chips. Not only power/ground lines but also bitlines of SRAM arrays may be damaged by EM. In this paper, we analyze current flow on SRAM bitline, demonstrate that it may suffer EM due to the pulsed dc pattern, and conclude that bitline’s EM reliability can dramatically be worsened by process variation due to a significant increase...
Electromigration (EM) greatly affects the long term reliability of VLSI chips. Not only power/ground (P/G) lines, but also bit-lines of SRAM arrays may be damaged by EM. In this work, we demonstrate that the EM reliability of an SRAM array can be dramatically worsened by process variation due to a significant increase of sub-threshold leakage current on the bit-line. We statistically model the effects...
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