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We form gallium-doped poly-Si:Ga/SiO2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al2O3 , the contacts exhibit $iV_{{\rm{oc}}}$ values of >730 mV with corresponding $J_{{\rm{oe}}}$ values of $<{\text{5 fA/cm}}^{2}$. These are among the best-reported values for p-type poly-Si/SiO...
Hydrogen (H) released during the annealing of hydrogenated amorphous silicon nitride (SiNx:H) films diffuses through the crystalline silicon and passivates the defects. This study shows that the stable H isotope deuterium (D), which is released during the annealing of deuterated amorphous silicon nitride (SiNx:D) films, diffuses through the crystalline silicon and is subsequently captured by a thin,...
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