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Using hexagonal boron nitride (hBN) as a substrate for graphene has shown faster carrier cooling which makes it ideal for high‐power graphene‐based devices. However, the effect of using boron‐isotope‐enriched hBN has not been explored. Herein, femtosecond pump‐probe spectroscopy is utilized to measure and compare the time dynamics of photo‐excited carriers in graphene‐hBN heterostructures for hBN...
We present ultrafast pump-probe measurements that show fast relaxation of carriers in graphene-hexagonal Boron Nitride (hBN) heterostructures due to the high interfacial thermal conductance of the graphene-hBN interface. This warrants the use of hBN as a substrate for high powered graphene devices.
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