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The growth behaviour of GaN selective area growth (SAG) by MOVPE on two types of nano‐patterned GaN substrates has been investigated. Samples were characterized by SEM, AFM and TEM. Results indicate that well formed nano‐pyramids with base size of ∼150 nm, and sharp tips are readily grown through mask patterns defined by electron beam lithography (EBL). A growth rate of nearly zero on the {10$ \bar...
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