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This paper reports the characteristics of gallium nitride layers that have been grown on top of an etched array of nanorods. Nanoimprint lithography has been used to create nanorods on a wafer‐scale that are subsequently passivated to allow selective regrowth from their tips by MOVPE. The first epitaxial growth step favoured lateral growth and the second resulted in a planar coalesced layer of gallium...
The growth behaviour of GaN selective area growth (SAG) by MOVPE on two types of nano‐patterned GaN substrates has been investigated. Samples were characterized by SEM, AFM and TEM. Results indicate that well formed nano‐pyramids with base size of ∼150 nm, and sharp tips are readily grown through mask patterns defined by electron beam lithography (EBL). A growth rate of nearly zero on the {10$ \bar...
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