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ZnO and ZnO: Al thin films of about 100 nm thicknesses were deposited by magnetron sputtering method at 200‐400 °C substrate temperatures under oxygen/argon gas mixture with different O/Ar ratio (0‐6%O2). The higher crystallinities for ZnO: Al and ZnO films are achieved at 400 °C substrate temperature under 0% and 4% (O/Ar) mixture ratios, respectively. The films were characterized by X‐ray diffraction...