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In this paper, the energy process window of nanosecond (ns) laser annealing for junctions activation has been determined for several dopants (As, P, BF2). The different recrystallization states observed when tuning laser energy density are explained by numerical simulations. Within these conditions, the laser impact on the thermal stability of ULK/copper inter-tiers interconnections has been evaluated...
Full channel and Macaroni-type 3-D SONOS memories are thoroughly compared. Macaroni channel provides easier device controllability, resulting in tighter distributions of all electrical characteristics, at the expense of lower channel conduction. Next to this clear trade-off, memory window is also degraded. Improving channel material quality is the way to alleviate the trade-off, as demonstrated by...
Pulsed Laser Thermal Annealing (LTA) of Silicon in the nanosecond regime has attracted a considerable attention regarding the activation process for nanodevices. Pulsed LTA with an Excimer laser is of a particular interest for the activation of dopants in shallow implanted layers such as the backside junction formation for 3D-integrated devices including sensing devices. Indeed, high activation of...
A collection of slides from the author's conference presentation shows dopant activation by pulsed laser thermal annealing. It also discusses single pulse deep melt activation, layer electrical properties and specific multiple layer junctions properties.
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