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We present a new bonding process for gallium nitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and sCd at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout)...
This paper investigates substrate biasing effects in a monolithically-integrated half-bridge stage rated for 600 V/20 A and fabricated in a lateral AlGaN/GaN-on-Si technology. On-resistance degradation effects caused by the common substrate potential are analyzed and explained for the monolithic half-bridge stage operating in a 400 V-synchronous buck converter. The detailed analysis of an ungated...
This work demonstrates the suitability of AlGaN/GaN-on-Si Schottky diodes in a non-isolated buck converter for LED applications. To the authors' knowledge, this is the first time that AlGaN/GaN-on-Si Schottky diodes have been employed as flyback diodes in a non-isolated buck converter. First the diodes are specifically developed and characterized. Afterwards the diodes are tested in an advanced non-isolated...
This paper provides recent developments in Gallium Nitride-based monolithically microwave integrated circuits (MMICs) suitable for space applications for the frequency range between 6 GHz and 90 GHz. MMICs for telemetry applications, tube replacement, and K-frequency band MMICs for array-concepts are discussed. This includes the space assessment of MMICs and demonstration of space operation in the...
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