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The electronic transport properties of several Mg‐doped GaAs nanowires are investigated. It is shown that Mg can be successfully used as a nontoxic and noncarcinogenic p‐type dopant in GaAs nanowires. The doping levels, expanding over two orders of magnitude, and free holes mobility in the NW were obtained by the analysis of field effect transistors transfer curves. The study of the temperature dependence...
It is shown that Mg can be used as a p-type nontoxic and noncarcinogenic alternative dopant in GaAs nanowires. The analysis of the temperature dependence of the electrical properties of individual nanowires shows that the electronic transport changes from conduction of free holes, above room temperature, to hopping conduction at lower temperatures. Two hopping conduction mechanisms were observed starting...
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