Search results for: Andrey Sarikov

Items from 1 to 9 out of 9 results

article

Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Luca Barbisan, Andrey Sarikov, Anna Marzegalli, Francesco Montalenti, more

physica status solidi (b) > 258 > 6 > n/a - n/a

Classical molecular dynamics simulations are used to investigate the 3D evolution of stacking faults (SFs), including the partial dislocation (PD) loops enclosing them, during growth of 3C‐SiC layers on Si(001). It is shown that the evolution of single PD loops releasing tensile strain during the initial carbonization stage, commonly preceding 3C‐SiC deposition, leads to the formation of experimentally...

article

Crystallization Behavior of Amorphous Si Nanoinclusions Embedded in Silicon Oxide Matrix

Andrey Sarikov

physica status solidi (a) > 217 > 4 > n/a - n/a

Herein, crystallization behavior of amorphous Si (a‐Si) nanoparticles embedded in Si oxide matrix is studied thermodynamically. The change of the Gibbs free energy of the Si nanoinclusion/Si oxide matrix system upon crystallization of the Si nanoinclusion core is calculated as a function of normalized core radius. Minimum values of the Gibbs free energy determine equilibrium crystallization states...

article

Atomistic modeling of epitaxial growth of semiconductor materials

Ignacio Martin-Bragado, Andrey Sarikov

Materials Science in Semiconductor Processing > 2016 > 42 > Part 2 > 223-229

The epitaxial growth of semiconductors is a very important step for the processing of microelectronic devices. Solid Phase Epitaxial Regrowth (SPER) is involved in both the recrystallization of amorphous silicon and germanium areas. Selective epitaxial growth (SEG) is routinely used in manufacturing modern 3D devices like finFETs, raised source/drain transistors, gate-all-around transistors, etc....

article

Internal strain mechanism of the incomplete phase separation of nonstoichiometric silicon oxide films

Andrey Sarikov

Solid State Communications > 2014 > 179 > Complete > 39-42

The role of internal strain on the formation of equilibrium states during phase separation of nonstoichiometric silicon oxide films is demonstrated. The strain contribution to the Gibbs free energy of Si/Si oxide systems has suitable mathematical structure to provide an explanation of the experimentally observed dependence of the equilibrium stoichiometry index of Si oxide phase on its initial value...

article

Influence of precipitates on the kinetics of iron gettering from the Si wafers by the Al layers

Andrey Sarikov, Victor Naseka, Vladimir Litovchenko

physica status solidi c > 8 > 3 > 767 - 770

Gettering of heavy metal impurities that cause unwanted recombination of minority carriers in the bulk of crystalline Si is one of the key requirements for the technology of wafer based Si solar cells. The impurity gettering leads to the increase of minority carrier life time and thus of solar cell efficiency. Aluminium layers are traditionally used for the extraction of heavy metal impurities from...

article

Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals

Alla Klimovskaya, Andrey Sarikov, Yury Pedchenko, Andrey Voroshchenko, more

Nanoscale Research Letters > 2011 > 6 > 1 > 1-8

In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals...

article

A model of the passivation of ultrathin SiO2 layer/Si substrate interfaces by atomic hydrogen from a thermalised plasma source

Andrey Sarikov, Bert Stegemann, Manfred Schmidt

Thin Solid Films > 2010 > 518 > 16 > 4662-4666

A theoretical model is developed to account for the kinetics of the decrease of the density of recombination active centres at the interface of SiO ₂ layers with Si(111) substrates as a result of treatment by thermalised hydrogen plasma. The recombination active centres at the SiO ₂ /Si interface are ascribed to be the P _b centres. The model developed takes into account the...

article

A model of preferential (100) crystal orientation of Si grains grown by aluminium-induced layer-exchange process

Andrey Sarikov, Jens Schneider, Martin Muske, Ina Sieber, more

Thin Solid Films > 2007 > 515 > 19 > 7465-7468

The aluminium-induced layer-exchange process allows to grow thin large-grained polycrystalline Si films on foreign substrates. A characteristic feature of these films is the preferential (100) orientation of Si grains, favourable for subsequent epitaxial thickening at low temperatures. In this work, a model based on the preferential nucleation is proposed, which elucidates a possible origin of the...

article

Theoretical study of the initial stage of the aluminium-induced layer-exchange process

Andrey Sarikov, Jens Schneider, Juliane Klein, Martin Muske, more

Journal of Crystal Growth > 2006 > 287 > 2 > 442-445

In this work, the initial stage of the aluminium-induced layer-exchange (ALILE) process is studied theoretically. The diffusion of silicon atoms from an amorphous Si layer into an Al layer through a permeable membrane prior to Si grain nucleation within the Al layer is considered. A kinetic model is derived to describe this process. In the framework of this model, the evolution of the Si concentration...

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