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For the realization of high breakdown voltages in power electronics, a low‐cost technology is developed, which allows the deep diffusion of aluminum from a physically deposited source. The approach requires only standard process steps that are already established in the manufacturing of silicon power devices. The sheet concentration of the diffusion profiles exceeds, with 8 1013 cm−2, the ones...
In this work, high-voltage monolithic 3D capacitors operating at 100V (6 MV/cm) are fabricated by the use of a through silicon-via-based technology. Electric characteristics of the monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of the planar capacitors with an equal contact area and identical dielectric thicknesses. The impact of the 3D architecture of capacitors...
High-voltage monolithic 3D capacitors operating at breakdown voltages up to 200 V are fabricated based on through silicon-via technology. Electric characteristics of monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of planar capacitors with the same area and dielectric thickness. Impact of the 3D capacitors' architecture on their electrical properties is studied...
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