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In this study, we found that inappropriate TU (top Cu metal line) geometry design induced product reliability failures issue. The TU geometry, having poor compatibility with wafer test probe issue, couldn't withstand the stress of wafer test probe resulting in fractures. Due to the inappropriate TU geometry design had major disadvantages in circuits characteristics. Reliability estimations exhibited...
In the tradition failure analysis procedure, it is hard to find the physical root cause for 40nm NAND flash reliability testing failure. Because of it has weak micro-leak with repeating and longer metal conducting wire. We used several analysis methods to narrow down the defect location such as OBIRCH (Optical Beam Induced Resistance change) and PVC (Passive Voltage Contrast) to narrow down to 100um...
Electrochemical migration (ECM) is proved from electrochemical phenomenon involving the transport of metal ions under voltage and an electrolyte. We studied metal migration phenomenon, generation mechanism and root cause on fine pitch BGA package product. Electrical detection failures caused by excessive leakage current phenomenon after HAST stress. The leakage current result caused by electrochemical...
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