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In this paper, we report a promising approach for the gate recess process with a suppressed current collapse in GaN-based high electron mobility transistors (HEMTs) by means of neutral beam (NB). A recessed gate structure has been widely studied as a way to realize normally-off operation in GaN, InP, and GaAs-based HEMTs. Since GaN-based materials are usually etched by dry process, plasma-induced...
In this research, we reduced plasma damages on GaN-based high electron mobility transistors (HEMTs) by means of neutral beam (NB) etching. The plasma damages which are induced during dry etching process are one of the causes of decreasing device performances. The NB is almost electrically uncharged and has few UV photons, thus it can reduce plasma damages on the GaN surface. We applied NB etching...
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