The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
One band switchable low noise amplifier (LNA) is designed for wideband applications. The proposed band switchable LNA has two switchable bands. The design consists of a input matching circuit, two cascode common-source amplifiers and an output buffer for measurement. The proposed LNA is designed with two switching capacitors as loading that use NMOS to make high quality factor. The proposed LNA gives...
This paper presents a dual-band low-noise amplifier (DB-LNA) with switching band groups for WiMedia Ultra-Wideband. The LNA is designed and implemented in TSMC 0.18 μm RF CMOS technology. Measurement results show that the DB-LNA gives 6.1 dB and 9.8 dB power gain, and that input and output matching are lower than -9.3dB/-9.4dB (Group-1/Group-6) and -9.2dB/-11.7dB (Group-1/Group-6). A minimum noise...
In this paper, a low power low-noise amplifier (LNA) using inductor-coupling resonated technique is designed for ultra-wideband (UWB) wireless system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with inductor-coupling resonated load, and an output buffer; it was fabricated in TSMC 0.18 um standard RF CMOS process. The UWB LNA gives 10.8 dB power...
In this paper, a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaking load and an output buffer for measurement purpose. It was fabricated in UMC 0.18 mum standard RF CMOS process. The LNA provides 14.1 dB maximum power gain between 2.3G Hz-8...
A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth which is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18 um RF CMOS process. The LNA gives 13.1 dB gain; 9.1 GHz 3 dB bandwidth (3.1-12.2 GHz) while consuming 13.9 mW through a 1.8 V supply. Over the...
In this paper, a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver system. The design consists of a wideband input impedance matching network, a cascoded amplifier with shunt-peaked load, a RLC-impedance feedback loop and an output buffer for measurement purpose. It is fabricated in TSMC 0.18 um standard RF CMOS process. The LNA gives 11.5 dB maximum power gain...
A multi-stage low-noise amplifier (LNA) with LC-tank load to extend the bandwidth is designed for ultra-wideband (UWB) wireless receiver. The design consists of three LC-tank cascode amplifier and one output buffer and is implemented in 0.18 mum RF CMOS process. The LNA gives 14.5 dB gain and 7.2 GHz 3 dB bandwidth (3.1 -10.3 GHz) while consuming 22.8 mW through a 1.5 V supply. Over the 3.1 GHz -10...
In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2nd-order notch filters and an output buffer for measurement purpose. It is simulated in TSMC 0.18 mum standard RF CMOS process. The LNA gives 13...
This paper presents a low-noise amplifier (LNA) with switching groups for MB-OFDM Group-A, C, D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18 um RF CMOS process. Simulation results show that power gain of ll.ldB, input and output matching lower then -8.4 dB and -8.3 dB, and a minimum NF of 3.8 dB can be achieved, while the power consumption is 24.8 mW through...
In this paper a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, a cascoded amplifier with shunt-peaked load, a RLC-impedance feedback loop and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.65dB maximum power gain...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.