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Supply voltage (Vcc) scaling is mostly used method to achieve low power consumption. However, a high Vccmin is required to meet the high target yield because the SRAM yield according to Vcc scaling shows “dual slope”. In this paper, the root causes of “dual slope” are analyzed. Both side effect of SRAM bitcell on the yield is also considered to accurately project Vccmin, which results in 40 mV increase...
A dry etch process for metal/high-k stacks has been developed to solve the integration problems associated with wet etch removal of high-k dielectric from the source and drain (S/D) areas. An in-situ plasma (O2) treatment has been introduced for the first time to cure the damage induced by the high-k dry etch process. Excellent electrical performances, such as dramatically improved leakage current,...
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