The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this research, four different equivalent circuit models that characterize the substrate/buffer loading effect for GaN high electron mobility transistor (HEMT) on Si substrate have been investigated. Y‐parameter measurements of an open de‐embedded structure have been used to characterize this effect in GaN HEMT on Si. An optimization technique based on hybridization between two meta‐heuristic techniques,...