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Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D process development, adequate reliability of copper (Cu) through-silicon vias (TSVs) is essential for commercial high-volume manufacturing. Annealing a silicon device with copper TSVs causes...
Three dimensional integrated circuits offer significant advantages over single chip packages in terms of functionalities and footprint needed. A key technology to enable the adoption of these advanced packages in electronic systems is Through-Silicon-Via (TSV). The use of TSV has realized integration in the vertical domain. However, as more dies are stacked within the package, the heat generated has...
In this paper, the electrical characteristics, such as CV and IV, of TSV embedded in grounded Si are presented. The aim is to understand the interaction between TSV and silicon substrate. Process developments of TSV with diameter of 5μm and height of 5-10μm are discussed in terms of DRIE Si via etching, isolation deposition, Cu ECP and Cu CMP.
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