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We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a high-power W-band amplifier. The developed HEMT showed basic reliability for commercial products. A unique double-layer silicon nitride (SiN) passivation film with oxidation resistance was adopted to suppress current collapse. The developed discrete InAlGaN/GaN-HEMT achieved...
We have theoretically analyzed the mechanism of PBTI degradation of high-k gate dielectrics. We proposed a PBTI degradation model based on a comprehensive physical theory using the general notation of gate leakage current and adequate trap distribution. Furthermore, by taking account not only pre-existing but also stress-induced defects, our model could explain the experimental data with high accuracy...
We report dynamic and microscopic investigations of electrical stress induced defects in a high-k/metal gate stack by electron beam induced current (EBIC). The correlation between dielectric breakdown and EBIC sites are reported. A systematic study was performed on pre-existing and electrical stress induced defects. These defects are successfully visualized. The origin of pre-existing defects is discussed,...
We have clarified the impact on reliability of La incorporation into the HfSiON gate dielectrics nMOSFETs (PBTI, TDDB). Although La incorporation is effective for pre-existing defect suppression, stress induced defect generation is more sensitive to stress voltage and temperature. This is caused by the elevation of the energy level of oxygen vacancy and high ionicity of La-O bond. The origin of defects...
We clarified the impact of the fifth material incorporation into HfSiON technology for Vth control on the reliability of high-k/metal gate stacks CMOSFETs. HfMgSiON is remarkably effective for suppressing electron traps, giving rise to a dramatic PBTI lifetime improvement for nMOSFETs. With pMOSFETs, Al incorporation is effective for the thermal deactivation of hole traps, resulting in NBTI lifetime...
Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. Carrier separated EBIC measurement has found that in non-stressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. The transport mechanisms of electron and...
This study aims to investigate the application of a technique to separate bulk hole trap effects from interface state degradation in NBTI to understand hole traps behavior including MOSFET fabrication process dependence. A gate last process is used to fabricate the pMOSFETs with HfSiON/TiN gate stacks. Results show that RTA is an effective method for reducing pre-existing hole traps, while nitridation...
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