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In this paper, we demonstrate a Monte Carlo simulator for ambipolar Schottky barrier MOSFETs which includes tunneling and thermal emission of electrons and holes and the appropriate treatment of carrier transport at nano-scale. The ambipolar characteristic of SB MOSFETs is reproduced by this simulator. The four operation modes in both n and p SB MOSFETs are revealed. Based on these simulations, it...
We report on a theoretical study of the valence band structures of germanium-silicon core-shell nanowires based on a 6times6 kldrp model. We take into account the inhomogeneous strain effects induced by the lattice mismatches between germanium and silicon. We find that the top subband ends drift back to Gamma point, and the effective masses of more subbands begin to decrease when the shell thickness...
In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that Ids and Vth calculated by 2D current model achieve a better accuracy than Surf model.
Recently a novel device structure called dopant-segregated Schottky barrier MOSFETs (DSS SBTs) has been proposed where the Schottky barrier height can be significantly reduced thus achieving much larger drain currents. Although quite a few experimental studies have been performed on this structure, further investigation on the carrier transport mechanism is required for the optimization of device...
We have modeled and calculated the band structure of Ge-Si core-shell nanowire, with both subband interactions between Ge core and Si shell and the inhomogeneous strain effects taken into account. Our results show that the effective masses of subbands, the densities of states and quantum conductance will undergo significant changes and converge to saturated values, as the Si shell turns thicker and...
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