The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents a new algorithm for the calibration of nearfield scanning microwave microscopes. By adopting techniques known from vector network analyzer calibration, a nearfield scanning microwave microscope can be calibrated at a specific microwave frequency with three standards. The advantages compared to existing calibration methods are that the calibration is valid for all possible samples...
The capacitance of series LaScO3-SiO2 capacitors on Si substrates has been investigated in the same DC bias range and at the same operation frequencies by admittance and scanning microwave microscopy (SMM) measurements on the 10−3 cm2 scale and 102 nm2 scale, respectively. By SMM measurements it is shown that changes in the series capacitance due to local current flows persist and that such nanoscale...
We describe a method to measure capacitances and dopant densities with a nanometer scale spatial resolution. It is implemented using an atomic force microscope with a conductive tip interfaced with a microwave vector network analyzer. A microwave signal is sent to the tip and the ratio of reflected and incident wave is measured. The technique - also referred to as scanning microwave microscopy (SMM)...
<para> We present an area efficient test structure that allows measurement of the statistical distribution of SRAM cell read currents and write trip voltages for 1 million SRAM core cells. The data taken from measurements of wafers fabricated with a 90-nm and 65-nm CMOS process flow show that the device variations are Gaussian distributed for more than 1 million devices, covering more than 5...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.