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In the fabrication process of wide bandgap gallium nitride high electron mobility transistors (GaN HEMT), due to the process error, process fluctuation, material defects, and other factors, wide bandgap semiconductor transistors produced in different batches will also have dispersed fluctuation of electrical characteristics under these special working conditions, which results in deviations between...
An integral equation‐based nonoverlapping domain decomposition method (IE‐NDDM) is proposed for efficient and accurate scattering analysis of electrically large PEC targets in a half‐space environment. Taking the condition that there are null fields as well as current inside PEC objects in the original problem, a novel explicit transmission condition is proposed to ensure continuity of electric currents...
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