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This paper compares the radio frequency (RF) performance enhancement of GaSb/Si‐based double gate (DG) tunnel field‐effect transistors (TFETs) and DG TFETs with gate‐drain overlap devices using technology computer‐aided design (TCAD) simulations. The geometrical parameters taken under consideration are gate length (Lg), gate oxide thickness (tox), channel thickness (tch), and doping parameters are...