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In this paper, we present a new erase gate disturb mechanism during programming of selected cell for split-gate Flash memory. This type of disturb occurs on the programmed cell sharing the same erase gate as the selected cell. The disturb is due to electron-loss from floating gate to erase gate caused by low-field Fowler-Norheim (F-N) tunneling. We proposed a method that adds extra bias voltages at...
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