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The use of strained SiGe is essential to improvement in device performance. However, the structure is susceptible to strain relaxation and wafer deformation during thermal annealing. The accumulation of stress in the wafer needs to be controlled to minimize photolithographic overlay errors. Laser spike annealing offers negligible pattern effects, closed-loop temperature control, and localized heating,...
Sub-melt millisecond annealing technologies have been widely accepted for current and future IC fabrication. Real-time temperature control, both within wafer and from wafer-to-wafer, is one of the key challenges that must be addressed for the successful introduction of any millisecond annealing technology into a production environment. In this paper, we show results from a novel pyrometry approach...
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