The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Recently we reported the development of new dual beam laser spike annealing system that offers flexible temperature profiles and a broad range of process parameters. For example, the dwell time can be varied from a few hundred microseconds to several tens of milliseconds, while simultaneously allowing the substrate temperature to be lowered significantly to accommodate silicide processes. Short anneal...
Scaling of source/drain extension junctions continues to be a major focus for sub 45 nm planar CMOS process development. Device scalability, drive current, and leakage performance are determined by junction depth, activation, and residual disorder. These requirements have driven ion implants into the deep sub-keV regime and integration of millisecond anneals for activation. In this paper, we introduce...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.