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A novel hybrid-anode AlGaN/GaN field-effect rectifier (HA-FER) with low operation voltage has been proposed. The rectifier features a Schottky gate controlled channel between the cathode and anode, by integrating the recessed-Schottky gate and anode Ohmic contact together (hybrid-anode). The turn-on voltage of HA-FER is determined by the threshold voltage of the channel instead of the Schottky barrier,...
A 700 V SA-LIGBT structure for high voltage applications is presented. An important feature is that the device has a good tradeoff among onset voltage, on-resistance and turn-off speed. This is realized mainly by two methods: large extent of P+ diffusion paralleled with N+ diffusion and the introduction of N-buffer layer in the anode. A robust SA-LIGBT is fabricated successfully with a breakdown voltage...
In this paper, an active oxygen-supplying micro direct methanol fuel cell (μDMFC) and an air-breathing μDMFC were designed, fabricated and tested. Stainless steel plates with the thickness of 200μm were chosen to fabricate the current collectors by the micro stamping. The 5-layered membrane electrode assembly (MEA) was fabricated by the catalyst coated membrane (CCM) method. The polymethyl methacrylate...
A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn- off state, there are two effective paths for electron extraction, and the...
A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called buried N-region controlled anode LIGBT (BNCA-LIGBT), is proposed and discussed. The BNCA-LIGBT is a modified structure of the N-region controlled anode LIGBT (NCA-LIGBT) which we have presented earlier. Numerical simulation results of the BNCA-LIGBT operation show that the turn-off speed is faster and on-state...
A new Lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called controlled anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage...
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