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The double taper-type mode convertor for direct bonded GaInAsP/SOI hybrid photonic devices was proposed and the characteristics of the fabricated structure using plasma activated bonding were measured. The calculated and measured results showed the coupling efficiencies of 90% and 75%, respectively.
Low temperature wafer scale direct bonding technology using plasma activated bonding (PAB) for heterogeneous photonic device integration is reviewed. Nitrogen plasma irradiation in a high vacuum chamber allows tight strength bonding between InP-based and SOI wafers with the bonding temperature of 150°C as well as low damage to GaInAsP quantum wells (QWs). In contrast Argon irradiation cause poor bonding...
A vertical trident coupler for 3D optical circuit was demonstrated. This is novel interlayer directional-type coupler between crystalline Si and amorphous-Si:H wire waveguides. The trident structure can manage both easiness of fabrication and high coupling even with relatively thick interlayer distances. In experiment, this trident coupler realized low coupling loss (coupling efficiency) of 0.58dB...
Inter-layer grating couplers sandwiched by two metal layers were demonstrated for high coupling efficiency vertical coupling between amorphous-Si:H multi-stacked optical waveguides. A coupling efficiency of 83% was achieved with grating couplers formed on 5 μm wide waveguides separated by 1 μm while theoretical coupling efficiency of 90% was obtained.
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