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The reflective spectrum and the incident angle effects of double-layers AR-coating and Sub-Wavelength AR-coating on the triple-junction GaAs Solar Cell are characterized by short-circuit current (Isc), open-circuit voltage (Voc), and conversion efficiency (η).
Abstract-We report an InPZIn0.53Ga0.47As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz fτ and 800-GHz fmax. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide...
Low temperature GaAs grown by an MBE system exhibiting Hall carrier mobility of 5000 cm2/v.s. is fabricated into continuous-wave (CW) Terahertz (THz) photomixers utilizing a dual-dipole antenna with an interdigitated feed structure. The characteristics of the CW THz photomixer are presented.
We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high...
MBE growth of InP-based HBTs on GeOI/Si substrates is described. A GaAs buffer is nucleated on the GeOI; then a graded InAlAs metamorphic buffer transitions the lattice constant to InP. TEM shows minimal anti-phase boundaries and limited dislocations propagating into the device layers. Large area DC parameters are similar to LM HBTs grown on InP. Small area devices exhibit peak current gain cutoff...
We report on the growth of InAs quantum-dash in InGaAlAs quantum-well structure on InP substrate using molecular beam epitaxy. The influence of different growth parameters such as InAs layer thickness, quantum barrier growth temperature, and number of stacking layers on the morphology and optical properties of dash structures were studied. The results serve as useful references for improved epitaxial...
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