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This work reported the grain growth kinetics of high‐entropy diboride (HEB) and HEB‐SiC ceramics containing 10, 20, and 30 vol% SiC during heat treatment at 1800°C. The coarsening of HEB phase occurred in the four kinds of ceramics during heat treatment, especially in HEB ceramics. The kinetic analysis showed that the grain growth of HEB phase in HEB and HEB‐SiC ceramics is controlled by interface‐controlled...