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In this paper, a normally off Al2O3/AlN/GaN MISFET on Si substrate for achieving high threshold voltage stability and uniformity is obtained based on selective area growth. A thin AlN space layer (SL, ~1 nm) is adopted to GaN-based template, and the AlGaN/GaN het-erostructureis selectivelygrownon the template to naturally form a recessed structure. By insertion of the AlN SL, the Al2O3/AlN/GaN interface...
In this paper, the leakage path and breakdown behavior of GaN on silicon substrate were studied systematically. Three terminal breakdown voltage characteristics of the samples with various ohmic contacts spacing were evaluated. With increasing the spacing between the contacts, the breakdown voltage increased linearly first and then saturated. In order to clarify the breakdown behavior, leakage path...
In this paper, we investigated the effect of GaN interlayer thickness and AlGaN back barrier layer on the material and electrical properties of AlGaN/GaN HFETs. When the thickness of GaN interlayer is approximately 3 and 5 nm, it will slightly increase surface roughness and degrades 2DEG carrier density. The 2DEG channel is also up shifted to nearly beneath the GaN interlayer. By contrast, 10 nm GaN...
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