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We describe components we developed in addressing several challenges in silicon photonics, including fiber coupling, demultiplexing, and polarization diversity. We then summarize several circuit examples for WDM transmitter / receiver and optical switch.
We present a monolithically integrated silicon-photonics VOA-MUX (variable optical attenuators with multiplexing filters) with power monitors. Submicron waveguides results in a compact chip size of 5mm × 4mm with a fast 3dB response of 23MHz.
We report first 3-Gb/s data measurements for a photonic link including a microring modulator connected optically by a waveguide to a Germanium detector. Error-free operation is achieved with a 2-dB electrical power penalty.
We demonstrate a chip containing ten low-chirp silicon modulators, each operating at 25 Gbps, multiplexed by a SiN arrayed-waveguide grating with 100-GHz spacing, showing the potential for 250 Gbps aggregated capacity on a 5×8 mm2 footprint.
We demonstrate a novel facet coupler for coupling between 10.4-m mode-diameter cleaved fibers and high-index-contrast SiN or Si waveguides. By creating a cantilevered glass waveguide surrounding an inverse taper and injecting a low-index cladding around the cantilever, we demonstrate coupling loss as low as 0.7 dB/facet to 500 nm 400 nm Si N waveguides, with only 0.2-dB polarization-dependent loss...
We demonstrate a high-speed integrated optical link on a silicon chip using low-power silicon microresonator electro-optic modulators and low-capacitance germanium photodetectors. Integrating compact devices to provide multiple functions is essential for building scalable optical interconnects.
We demonstrate 50 Gbit/s modulation using four silicon microring modulators within a footprint of 500 mum2. This is the highest total modulation capacity shown in silicon using compact micro-ring modulators.
We demonstrate low loss silicon waveguides fabricated without silicon etching by selective oxidation. We show propagation losses of 0.3dB/cm (lambda=1.55 mum), roughness of 0.3 nm RMS, and 0.0002 dB loss for a 90deg bend with 20 mum bending radius.
We demonstrate germanium photodetectors integrated on submicron silicon waveguides by low-temperature bonding and ion-cut. The devices show very low dark current of ~100 nA, fiber-accessed responsivity of 0.44 A/W, and quantum efficiency of >90%.
We demonstrate a low loss metal slot waveguide of deep subwavelength confinement (~lambda/10) and efficient coupling with standard silicon wire waveguides for on chip integration.
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