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A simple and reliable one-time-programmable (OTP) memory for low-temperature polysilicon thin-film-transistor technology with metal-induced lateral crystallization (MILC) is developed. The antifuse memory element is based on the breakdown of thin silicon dioxide deposited on smooth surface achieved by MILC. The effects of crystallization process and electrode configurations on the memory characteristics,...
Let G(V, E) be a simple graph,k (1 les k les Delta + 1) is a positive integer, f is a mapping from V(G) upsi E(G) to {1, 2,..., k} such that foralluu, uw isin E(G), v ne w, f(uv) ne f(uw); foralluv isin E(G), if d(u) = d(v)then C(u) = C(v); we say that f is the adjacent vertex reducible edge-total coloring of G. The maximum number of k is called the adjacent vertex reducible edge-total chromatic number...
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