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We report experimental characterization and modeling of direct and trap-assisted tunneling (TAT) in high-K metal gate (HKMG)-based access transistor and deep trench (DT) capacitor constituting a 32 nm embedded dynamic random access memory (eDRAM) device. This is the first eDRAM technology that has successfully integrated HKMG-based access transistor and DT technology. The experimental results are...
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