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Recently, Ge has been intensively studied as a light emission material that emits at ~1.5 μm, as it has been theoretically proven to be a promising candidate to realize Si-based light source for on-chip and chip-to-chip communications. In this paper, photoluminescence (PL) is reported from heavily phosphorus (P)-implanted epitaxial Ge thin films on Si. Sheet resistance has been measured to characterize...
A silicon waveguide based splitter is a key device for polarization diversity circuit. A bilayer waveguide structure was proposed by MIT to split the input light into its orthogonal components. It is challenging to fabricate a bilayer silicon waveguide by the conventional two-step-etching process due to precise alignment and accurate etch thickness required. In addition, the partial etched waveguide...
Aluminum nitride (AlN) films have attractive physical properties, such as wide bandgap (6.2 eV), high thermal conductivity (320 W/mK), and good match of both thermal expansion coefficient and lattice constant to those of Si substrate . Based on these properties, AlN films can be applied in surface acoustic wave (SAW) devices, memories devices, and optoelectronic devices. It has been reported in our...
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