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A systematic study into the MOCVD of V‐O films using the vanadyl‐acetylacetonate [VO(acac)2] precursor is carried out. The films are prepared via low pressure MOCVD on Si(001) substrates. The nature and quality of films are examined by varying operational parameters, e.g., deposition temperature, precursor vaporization rate, and flow of oxygen reacting gas. X‐ray diffraction data point to the formation...