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A high-voltage lateral double-diffused MOSFET with N-island (NIS) and step-doped drift (SDD) region in partial silicon-on-insulator (PSOI) technology is proposed. In the lateral direction, the SDD region and the NIS on the buried oxide layer (BOX) introduce two additional electric field peaks, which can improve the surface field distribution and breakdown voltage (BV). In the vertical direction, due...
A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is...
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