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The InAs/GaAsSb quantum dot/barrier material system has been identified as a candidate for implementing the quantum dot (QD) solar cell for an Sb content of ∼ 12%. We present results from the growth of this system on GaAs substrates by Molecular Beam Epitaxy (MBE). The results show that the growth of GaAsSb requires special care in order to ensure the highest quality interface and also to maintain...
In this paper, we presented the results of YBCO films deposited epitaxially on both SrTiO3 single crystal and textured Ag substrates by a TFA-MOD method. The growing conditions and forming mechanisms of the YBCO films on these two kinds of substrates was investigated systematically. It was found that the precursor film coated on Ag substrate took less time to completely decompose to an amorphous precursor...
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