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We report a new strategy for obtaining an ultralow temperature solution derived metal-oxide dielectric such alumina, by using molecular clusters (MCs) (aluminium-oxo-hydroxy cluster, Al-13) as a precursor and local structure controllable activation process via deep-ultraviolet (DUV)-induced photochemical activation. We show that the combination of Al-13 MC precursor and the spatially controllable...
We have employed XeCl Excimer Laser Annealing (ELA) treatment on ZTO active layer in low temperature solution-processed Zinc Tin Oxide (ZTO) Thin Film Transistors (TFTs) with 300 °C of annealing temperature. The threshold voltage decreased from 18.38 V to 4.78 V because of the increase of carrier concentration by reduction of Cl bonding by employing ELA treatment. The saturation mobility was also...
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